Silicon Material

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Silicon material continues to be mainstream of next-generation packages that integrate miniaturized chips and chiplets, making it possible to create more complex integrated systems as well as less expensive. HORIBA will contribute with its measurement technology for film thickness measurement, stress analysis, elemental analysis, and foreign material analysis of silicon materials.

Film Thickness and Quality | Stress Analysis | Elemental Analysis | Foreign Object Detection/Analysis

Film Thickness and Quality

In the advancement of thin film technology through miniaturization, we propose solutions for achieving high film deposition control, such as in-situ evaluation during the film deposition process and evaluation of thin films at the Ångström order level.

Film thickness and film quality analysis of ultra-thin films: SiO₂ film analysis of Å order thin film using spectroscopic ellipsometer
Film quality analysis of silicon oxide film: Changes in film quality within the same type of film using a spectroscopic ellipsometer
Thin film analysis in liquid: Analysis using a spectroscopic ellipsometer liquid measurement cell
In situ thin film evaluation: In-chamber wafer analysis by incorporating analytical parts into the chamber

Membrane information obtained using a spectroscopic ellipsometer

Stress Analysis

We propose a multifaceted stress evaluation solution using a Raman spectrometer boasting high wavenumber and spatial resolution, along with cathodoluminescence (CL).

Stress imaging of Si microfabricated structures: Stress distribution analysis using Raman images
Stress analysis of SiGe: High spatial resolution stress analysis using AFM Raman

Raman spectroscopy is a very well suited technique to determine both Ge fraction and strain in SiGe layers and Si cap layers. Moreover the possibility of using both UV and visible excitation lines on the same instrument is essential to study structures made up of a Silicon cap layer on top of a SiGe layer. The relative Ge content in the constant Si1-xGex layer is calculated from the visible Raman spectrum and the strain of the cap Si layer is derived from the UV Raman spectrum.

Elemental Analysis

Foreign Object Detection/Analysis

Defects in wafers can also be caused by foreign matter, and we will introduce a method of microscopic elemental analysis to identify the cause of defects.

Reticle/mask foreign object detection: High-throughput foreign object detection
Foreign matter removal device on wafers: Automatic foreign matter removal device using blow & vacuum suction